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    Home/    Category/    FET, MOSFET/    NTMD4N03R2G

    MOSFET 2N-CH 30V 4A 8SOIC NTMD4N03R2G

    NTMD4N03R2G image
    The pictures are for reference only
    Brand:
    ON
    Model:
    NTMD4N03R2G
    Description:
    MOSFET 2N-CH 30V 4A 8SOIC
    Stock:
    14045
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Price：$0.13
    The market price fluctuates. Please consult the customer service for the actual price
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    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：+86 19166251823(Wechat)
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    4A
  • Drain source voltage (Vdss)
    30V
  • FET Type
    2 N-channels(two)
  • FET function
    Logic level gate
  • Gate charge (Qg) at different Vgs (maximum)
    16nC @ 10V
  • Input capacitance at different Vds (Ciss) (maximum)
    400pF @ 20V
  • On resistance (maximum) for different Ids and Vgs
    60 mΩ @ 4A,10V
  • Power - maximum
    2W
  • Vgs (th) (maximum) for different Ids
    3V @ 250µA
  • packing
    TR,CT,bulk
  • series
    -
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    8-SOIC(0.154,3.90mm wide)
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    NTMD4N03R2G（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14045,Price reference "real-time change" China/Hongkong。 NTMD4N03R2G package/specs, Download NTMD4N03R2G、Datasheet。
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    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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